HD2312 Datasheet, PDF (3/5 Pages) Jiangsu High diode Semiconductor Co., Ltd – Plastic-Encapsulate MOSFET

Typical Characteristics
20
T =25℃
a
18 Pulsed
Output Characteristics
V =3V,4V,5V,6V
GS
16
14
V =2V
GS
12
10
8
6
V =1.5V
GS
4
2
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
DRAIN TO SOURCE VOLTAGE V (V)
DS
14
V =3V
DS
12
Pulsed
10
8
Transfer Characteristics
T =25℃
a
T =100℃
a
6
4
2
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
GATE TO SOURCE VOLTAGE V (V)
GS
40
T =25℃
a
Pulsed
35
30
R
DS(ON)
——
I
D
V =1.8V
GS
25
V =2.5V
GS
20
V =4.5V
15
GS
10
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
DRAIN CURRENT I (A)
D
R
DS(ON)
——
V
GS
150
Pulsed
I =5A
D
100
T =100℃
a
50
T =25℃
a
0
0
1
2
3
4
5
GATE TO SOURCE VOLTAGE V (V)
GS
6
Pulsed
1
I
S
——
V
SD
T =100℃
a
0.1
T =25℃
a
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
SOURCE TO DRAIN VOLTAGE V (V)
SD
1.2
1.0
0.8
0.6
0.4
0.2
0.0
25
Threshold Voltage
I =250uA
D
50
75
100
JUNCTION TEMPERATURE T (℃)
j
High Diode Semiconductor
125
3