HD2312 Datasheet, PDF (2/5 Pages) Jiangsu High diode Semiconductor Co., Ltd – Plastic-Encapsulate MOSFET

Electrical Characteristics (T_A=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Static
Drain-source breakdown voltage
V(BR) DSS VGS = 0V, ID =250µA
Gate-source leakage
I_GSS
VDS =0V, VGS =±8V
Zero gate voltage drain current
I_DSS
VDS =20V, VGS =0V
Gate-source threshold voltage
VGS(th)
VDS =V_GS, ID =250µA
Drain-source on-state resistance^a
RDS (on)
VGS =4.5V, ID =5.0A
VGS =2.5V, ID =4.7A
Forward tranconductance^a
Dynamic^b
VGS =1.8V, ID =4.3A
gfS
VDS =10V, ID =5.0A
Input capacitance
C_iss
Output capacitance
C_oss
VDS =10V,VGS =0V,f =1MHz
Reverse transfer capacitance
C_rss
Gate resistance
Rg
f =1MHz
Turn-on delay Time
td(on)
Rise time
Turn-off Delay time
tr
td(off)
V_GEN=5V,V_DD=10V,
ID =4A,R_G=1Ω, R_L=2.2Ω
Fall yime
tf
Drain-source body diode characteristics
Forward diode voltage
V_SD
VGS =0V,I_S=4A
Notes :
a. Pulse Test : pulse width ≤300µs, duty cycle ≤2%.
b. These parameters have no way to verify.
Min Typ Max Unit
20
V
±100 nA
1.0
µA
0.45 0.7
1.0
V
0.018 0.0318
0.023 0.0356 Ω
0.030 0.0414
6
S
865
105
pF
55
0.5
4.8
Ω
10
20
ns
32
12
0.75 1.2
V
High Diode Semiconductor
2