HD2312 Datasheet, PDF (1/5 Pages) Jiangsu High diode Semiconductor Co., Ltd – Plastic-Encapsulate MOSFET

HD2312
SOT-23 Plastic-Encapsulate MOSFET
N -Channel MOSFET
Product Summary
V_(BR)DSS
20 V
R_DS(on)MAX
31.8mΩ@4.5V
35.6mΩ@2.5V
41.4mΩ@1.8V
I_D
SOT- 23
D
5A
Features
● _{TrenchFET Power MOSFET}
● Excellent R_DS(on) and Low Gate Charge
S
G
Applications
● DC/DC Converters
● Load Switching for Portable Applications
Marking:
● S12
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
t=5s
t=5s
Symbol
V_DS
V_GS
I_D
I_DM
I_S
P_D
R_θJA
T_J
T_stg
Value
20
±8.0
5
20
1.04
0.35
357
150
-50 ~+150
Unit
V
A
W
℃/W
℃
High Diode Semiconductor
1