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| HD2310 Datasheet, PDF (3/5 Pages) Jiangsu High diode Semiconductor Co., Ltd – Plastic-Encapsu l ate MOSFET | |||
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Typical Characteristics
15
Pulsed
10
Output Characteristics
VGS=5Vã4Vã3.0V
VGS=2.5V
5
VGS=2.0V
8
VDS=5.0V
Pulsed
6
Transfer Characteristics
Ta=25â
Ta=100â
4
2
0
0
1
2
3
4
5
DRAIN TO SOURCE VOLTAGE VDS (V)
140
120
100
80
60
40
20
0.5
2
R
DS(ON)
ââ
I
D
VGS=4.5V
Ta=25â
Pulsed
VGS=10V
4
6
8
10
DRAIN CURRENT ID (A)
0
0
400
300
1
2
3
4
GATE TO SOURCE VOLTAGE VGS (V)
R
DS(ON)
ââ
V
GS
Ta=25â
Pulsed
200
ID=3A
100
0
0
2
4
6
8
10
GATE TO SOURCE VOLTAGE VGS (V)
10
Ta=25â
Pulsed
1
I
S
ââ
V
SD
0.1
0.01
1E-3
0.2
0.4
0.6
0.8
1.0
1.2
SOURCE TO DRAIN VOLTAGE VSD (V)
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
25
Threshold Voltage
ID=250uA
50
75
100
JUNCTION TEMPERATURE TJ (â)
High Diode Semiconductor
125
3
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