HD2310 Datasheet, PDF (2/5 Pages) Jiangsu High diode Semiconductor Co., Ltd – Plastic-Encapsu l ate MOSFET

Electrical Characteristics (T_A=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
STATIC CHARACTERISTICS
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate threshold voltage (note 3)
Drain-source on-resistance (note 3)
Forward tranconductance (note 3)
Diode forward voltage (note 3)
V (BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
gFS
V_SD
VGS = 0V, ID =250µA
VDS =60V,VGS = 0V
VGS =±20V, VDS = 0V
VDS =V_GS, ID =250µA
VGS =10V, ID =3A
VGS =4.5V, ID =3A
VDS =15V, ID =2A
I_S=3A, VGS = 0V
DYNAMIC CHARACTERISTICS (note 4)
Input Capacitance
C_iss
Output Capacitance
C_oss
Reverse Transfer Capacitance
C_rss
VDS =30V,VGS =0V,f =1MHz
SWITCHING CHARACTERISTICS (note 4)
Turn-on delay time
td(on)
Turn-on rise time
tr
Turn-off delay time
td(off)
Turn-off fall time
tf
Total Gate Charge
Q_g
Gate-Source Charge
Q_gs
Gate-Drain Charge
Q_gd
V_GS=10V,V_DD=30V,
I_D=1.5A,R_GEN=1Ω
VDS =30V,VGS =4.5V,ID =3A
Notes :
1. Repetitive rating : Pulse width limited by junction temperature.
2. Surface mounted on FR4 board , t≤10s.
3. Pulse Test : Pulse Width≤300µs, Duty Cycle≤0.5%.
4. Guaranteed by design, not subject to producting.
Min Typ Max Unit
60
V
1
µA
±100 nA
0.5
2
V
105 mΩ
125 mΩ
1.4
S
1.2
V
247
pF
34
pF
19.5
pF
6
ns
15
ns
15
ns
10
ns
6
nC
1
nC
1.3
nC
High Diode Semiconductor
2