HD2310 Datasheet, PDF (1/5 Pages) Jiangsu High diode Semiconductor Co., Ltd – Plastic-Encapsu l ate MOSFET

HD2310
SOT-23 Plastic-Encapsulate MOSFET
N -Channel MOSFET
Product Summary
V_(BR)DSS
60 V
R_DS(on)MAX
105mΩ@^{10 V}
125mΩ@4.5V
I_D
SOT- 23
D
3A
Features
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
Applications
● DC/DC Converters
● Battery Switch
Marking:
● S10
S
G
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (note 1)
Power Dissipation
Thermal Resistance from Junction to Ambient (note 2)
Junction Temperature
Storage Temperature
Symbol
V_DS
V_GS
I_D
I_DM
P_D
R_θJA
T_J
T_STG
Value
60
±20
3
10
0.35
357
150
-55~+150
Unit
V
V
A
A
W
℃/W
℃
℃
High Diode Semiconductor
1