HD2307 Datasheet, PDF (3/5 Pages) Jiangsu High diode Semiconductor Co., Ltd – SOT-23 Plastic-Encapsulate MOSFET

Typical Characteristics
-20
T =25℃
a
Pulsed
-16
-12
-8
-4
Output Characteristics
V =-10V,-8V,-6V
GS
V =-4.5V
GS
V =-4.0V
GS
V =-3.5V
GS
V =-3.0V
GS
-0
-0
-1
-2
-3
-4
-5
DRAIN TO SOURCE VOLTAGE V (V)
DS
300
T =25℃
a
Pulsed
250
R_DS(ON) —— I_D
200
V =-4.5V
GS
150
V =-10V
100
GS
50
-0
-4
-8
-12
-16
-20
DRAIN CURRENT I (A)
D
-10
T =25℃
a
Pulsed
I_S —— V_SD
-1
-10
T =25℃
a
Pulsed
-8
Transfer Characteristics
-6
-4
-2
-0
-0
-1
-2
-3
-4
-5
GATE TO SOURCE VOLTAGE V (V)
GS
500
R_DS(ON) —— V_GS
T =25℃
a
Pulsed
400
300
I =-3.5A
D
200
100
0
-0
-4
-8
-12
-16
-20
GATE TO SOURCE VOLTAGE V (V)
GS
-0.1
-0.01
-0.0
-0.3
-0.6
-0.9
-1.2
-1.5
SOURCE TO DRAIN VOLTAGE V (V)
SD
High Diode Semiconductor
3