HD2307 Datasheet, PDF (1/5 Pages) Jiangsu High diode Semiconductor Co., Ltd – SOT-23 Plastic-Encapsulate MOSFET

HD2307
SOT-23 Plastic-Encapsulate MOSFET
P -Channel MOSFET
Product Summary
V_(BR)DSS
-30 V
R_DS(on)MAX
88mΩ@-10V
138mΩ@-4.5V
I_D
-2.7A
SOT- 23
D
Features
● _{TrenchFET Power MOSFET}
● Excellent R_DS(on) and Low Gate Charge
S
G
Applications
● _{Load Switch for Portable Devices}
● DC/DC Converter
Marking:
● _S7
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ^a,b
Continuous Source-Drain Current^a,b
Power Dissipation^a,b
Thermal Resistance from Junction to Ambient (t≤5s)
Operating Junction Temperature
Storage Temperature
Symbol
V_DS
V_GS
I_D
I_S
P_D
R_θJA
T_J
T_stg
Value
-30
±20
-2.7
-0.91
1.1
114
150
-55 ~+150
Unit
V
A
W
℃/W
℃
High Diode Semiconductor
1