HD2307 Datasheet, PDF (2/5 Pages) Jiangsu High diode Semiconductor Co., Ltd – SOT-23 Plastic-Encapsulate MOSFET

Electrical Characteristics (T_A=25℃ unless otherwise noted)
Parameter
Symbol Test Condition
Static
Drain-Source Breakdown Voltage
V (BR)DSS VGS = 0V, ID =-250µA
Gate-Source Threshold Voltage
VGS(th)
VDS =V_GS, ID =-250µA
Gate-Source Leakage
I_GSS
VDS =0V, VGS =±20V
Zero Gate Voltage Drain Current
VDS =-30V, VGS =0V
I_DSS
VDS =-30V, VGS =0V, T_J=55℃
Drain-Source On-State Resistance^c
Forward Transconductance^c
Dynamic^d
RDS(on)
g_fs
VGS =-4.5V, ID =-2.5A
VGS =-10V, ID =-3.5A
VDS =-10V, ID =-3.5A
Input Capacitance
C_iss
Output Capacitance
C_oss
VDS =-15V,VGS =0V,f =1MHz
Reverse Transfer Capacitance
C_rss
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q_g
VDS =-15V,VGS =-4.5V,
Q_gs
ID =-2.5A
Q_gd
Gate Resistance
R_g
f =1MHz
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
V_DD=-15V,
R_L=15Ω, ID =-1A,
V_GEN=-4.5V,Rg=1Ω
Drain-source Body diode characteristics
Body Diode Voltage
V_SD
I_S=-0.75A, ,VGS =0
Notes:
a. t=5s.
b. Surface mounted on 1” ×1” FR4 board.
c. Pulse Test : Pulse Width < 300µs, Duty Cycle ≤2%.
d. Guaranteed by design, not subject to production testing.
Min Typ Max Unit
-30
V
-1
-3
±100 nA
-1
µA
-10
0.110 0.138
Ω
0.073 0.088
7
S
340
67
pF
51
4.1 6.2
1.3
nC
1.8
10
Ω
40
60
40
60
ns
20
40
17
30
-0.8 -1.2
V
High Diode Semiconductor
2