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| HD2303 Datasheet, PDF (3/5 Pages) Jiangsu High diode Semiconductor Co., Ltd – SOT-23 Plastic-Encapsu l ate MOSFET | |||
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Typical Characteristics
Output Characteristics
-20
-18
Ta=25â
Pulsed
-16
-14
-12
VGS=-6V
VGS=-5V
VGS=-4.5V
-10
VGS=-4V
-8
VGS=-3.5V
-6
-4
VGS=-3V
-2
-0
-0
-1
-2
-3
-4
DRAIN TO SOURCE VOLTAGE VDS (V)
160
150 Ta=25â
Pulsed
140
R
DS(ON)
ââ
I
D
130
120
110
VGS=-4.5V
100
90
80
70
60
VGS=-10V
50
40
30
20
-0
-1
-2
-3
-4
-5
DRAIN CURRENT ID (A)
I
S
ââ
V
SD
-5
-1
Ta=100â
Pulsed
Ta=25â
-0.1
Pulsed
-0.01
-0.0
-0.4
-0.8
-1.2
-1.6
SOURCE TO DRAIN VOLTAGE VSD (V)
Transfer Characteristics
-12
VDS=-3.0V
Pulsed
-10
Ta=25â
Ta=100â
-8
-6
-4
-2
-0
-0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
GATE TO SOURCE VOLTAGE VGS (V)
R
DS(ON)
ââ
V
GS
800
700
600
ID=-2A
500
400
300
Ta=100â
200
Pulsed
Ta=25â
100
Pulsed
0
-0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
GATE TO SOURCE VOLTAGE VGS (V)
-1.8
-1.7
-1.6
-1.5
-1.4
-1.3
-1.2
25
Threshold Voltage
ID=-250uA
50
75
100
125
JUNCTION TEMPERATURE TJ (â)
High Diode Semiconductor
3
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