HD2303 Datasheet, PDF (1/5 Pages) Jiangsu High diode Semiconductor Co., Ltd – SOT-23 Plastic-Encapsu l ate MOSFET

HD2303
SOT-23 Plastic-Encapsulate MOSFET
P -Channel MOSFET
Product Summary
V_(BR)DSS
-30 V
R_DS(on)MAX
190mΩ@-10V
330mΩ@-4.5V
I_D
-1.9A
SOT- 23
D
Features
● _{TrenchFET Power MOSFET}
● Excellent R_DS(on) and Low Gate Charge
S
G
Applications
● _{Load Switch for Portable Devices}
● DC/DC Converter
Marking:
● _S3
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Thermal Resistance from Junction to Ambient(t≤5s)
Junction Temperature
Storage Temperature
Symbol
V_DS
V_GS
I_D
I_S
P_D
R_θJA
T_J
T_STG
Value
-30
±20
-1.9
-0.83
0.35
357
150
-50 ~+150
Unit
V
A
W
℃/W
℃
High Diode Semiconductor
1