HD2303 Datasheet, PDF (2/5 Pages) Jiangsu High diode Semiconductor Co., Ltd – SOT-23 Plastic-Encapsu l ate MOSFET

Electrical Characteristics (T_A=25℃ unless otherwise noted)
Parameter
Symbol Test Condition
Min Typ Max Units
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance^a
Forward Transconductance^a
Dynamic^b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V(BR)DSS
VGS(th)
I_GSS
I_DSS
RDS(on)
gfs
VGS = 0V, ID =-250µA
VDS =V_GS, ID =-250µA
VDS =0V, VGS =±20V
VDS =-30V, VGS =0V
VGS =-10V, ID =-1.9A
VGS =-4.5V, ID =-1.4A
VDS =-5V, ID =-1.9A
-30
V
-1
-1.6
-3
±100 nA
-1
µA
0.075 0.190
Ω
0.115 0.330
1
S
C_iss
155
C_oss
VDS =-15V,VGS =0V,f =1MHz
35
pF
C_rss
25
VDS =-15V,VGS =-10V,ID =-1.9A
Q_g
Q_gs
VDS =-15V,VGS =-4.5V,ID=-1.9A
4
8
2
4
nC
0.6
Q_gd
1
R_g
f =1MHz
1.7
8.5
17
Ω
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
V_DD=-15V,
R_L=10Ω, ID =-1.5A,
V_GEN=-10V,Rg=1Ω
V_DD=-15V,
R_L=10Ω, ID =-1.5A,
V_GEN=-4.5V,Rg=1Ω
4
8
11
18
11
18
8
16
ns
36
44
37
45
12
18
9
14
Drain-source Body diode characteristics
Continuous Source-Drain Diode
Current
I_S
Pulse Diode Forward Current^a
I_SM
Body Diode Voltage
V_SD
T_C=25℃
I_S=-1.5A
-1.75
A
-10
-0.8 -1.2
V
Notes :
a. Pulse Test : Pulse Width ≤300µs, Duty Cycle ≤2%.
b. Guaranteed by design, not subject to production testing.
High Diode Semiconductor
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