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| HD2302 Datasheet, PDF (3/5 Pages) Jiangsu High diode Semiconductor Co., Ltd – SOT-23 Plastic-Encapsu l ate MOSFET | |||
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Typical Characteristics
Output Characteristics
20
VGS=3.5ã3.0ã2.5V
Ta=25â
Pulsed
15
VGS=2.0V
10
VGS=1.5V
5
0
0
2
4
6
8
10
DRAIN TO SOURCE VOLTAGE VDS (V)
120
Ta=25â
Pulsed
100
R
DS(ON)
ââ
I
D
80
VGS=2.5V
60
40
VGS=4.5V
20
0
5
10
15
20
25
30
DRAIN CURRENT ID (A)
10
Ta=25â
Pulsed
I ââ V
S
SD
10
Ta=25â
Pulsed
8
Transfer Characteristics
6
4
2
0
0.0
300
250
200
150
100
50
0
0
0.5
1.0
1.5
2.0
2.5
GATE TO SOURCE VOLTAGE VGS (V)
R
DS(ON)
ââ
V
GS
Ta=25â
Pulsed
ID=3.6A
2
4
6
8
10
GATE TO SOURCE VOLTAGE VGS (V)
1
0.1
0.0
0.4
0.8
1.2
1.6
2.0
SOURCE TO DRAIN VOLTAGE VSD (V)
High Diode Semiconductor
3
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