HD2302 Datasheet, PDF (2/5 Pages) Jiangsu High diode Semiconductor Co., Ltd – SOT-23 Plastic-Encapsu l ate MOSFET

Electrical Characteristics (T_A=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Static
Drain-source breakdown voltage
Gate-threshold voltage
Gate-body leakage
Zero gate voltage drain current
Drain-source on-resistance^a
Forward transconductance^a
V_(BR)DSS
VGS(th)
I_GSS
I_DSS
rDS(on)
gfs
VGS = 0V, ID =10µA
VDS =V_GS, ID =50µA
VDS =0V, VGS =±8V
VDS =20V, VGS =0V
VGS =4.5V, ID =3.6A
VGS =2.5V, ID =3.1A
VDS =5V, ID =3.6A
Diode forward voltage
V_SD
I_S=0.94A,V_GS=0V
Dynamic
Total gate charge
Gate-source charge
Gate-drain charge
Input capacitance ^b
Output capacitance ^b
Reverse transfer capacitance^b
Switching^b
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Q_g
Q_gs
VDS =10V,VGS =4.5V,ID =3.6A
Q_gd
C_iss
C_oss VDS =10V,VGS =0V,f=1MHz
C_rss
td(on)
tr
td(off)
tf
V_DD=10V,
R_L=5.5Ω, ID ≈3.6A,
V_GEN=4.5V,Rg=6Ω
Notes :
a. Pulse Test : Pulse width≤300µs, duty cycle ≤2%.
b. These parameters have no way to verify.
Min Typ Max Units
20
V
0.65 0.95 1.2
±100 nA
1
µA
0.035 0.060
Ω
0.045 0.115
8
S
0.76 1.2
V
4.0
10
0.65
nC
1.5
300
120
pF
80
7
15
55
80
ns
16
60
10
25
High Diode Semiconductor
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