HD2302 Datasheet, PDF (1/5 Pages) Jiangsu High diode Semiconductor Co., Ltd – SOT-23 Plastic-Encapsu l ate MOSFET

HD2302
SOT-23 Plastic-Encapsulate MOSFET
N -Channel MOSFET
Product Summary
V_(BR)DSS
20 V
R_DS(on)MAX
60mΩ@4.5V
115mΩ@2.5V
I_D
2.1A
SOT- 23
D
Features
● _{TrenchFET Power MOSFET}
● Excellent R_DS(on) and Low Gate Charge
S
G
Applications
● Extreme fast switches
Marking:
● _S2
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source-Drain Current(Diode Conduction)
Power Dissipation
Thermal Resistance from Junction to Ambient (t≤5s)
Operating Junction
Storage Temperature
V_DS
V_GS
I_D
I_S
P_D
R_θJA
T_J
T_STG
Value
20
±8
2.1
0.6
0.4
312.5
150
-55 ~+150
Unit
V
A
W
℃/W
℃
High Diode Semiconductor
1