HD2301 Datasheet, PDF (3/5 Pages) Jiangsu High diode Semiconductor Co., Ltd – SOT-23 Plastic-Encapsulate MOSFET

Typical Characteristics
-10
T =25℃
a
Pulsed
-8
Output Characteristics
V =-3V,-4V,-5V
GS
V =-2.5V
GS
-6
V =-2V
GS
-4
-2
V =-1.5V
GS
0
0
-1
-2
-3
-4
DRAIN TO SOURCE VOLTAGE V (V)
DS
150
T =25℃
a
Pulsed
R I
DS(ON) D
V =-2.5V
GS
100
V =-4.5V
GS
50
0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
DRAIN CURRENT I (A)
D
-3
Pulsed
I -V
S
SD
-1
T =100℃
a
T =25℃
a
-10
V =-3V
DS
Pulsed
-8
-6
Transfer Characteristics
T =25℃
a
T =100℃
a
-4
-2
0
0.0
500
400
300
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
GATE TO SOURCE VOLTAGE V (V)
GS
R -V
DS(ON)
GS
Pulsed
I =-2.6A
D
T =100℃
a
200
100
T =25℃
a
0
0
-1
-2
-3
-4
-5
GATE TO SOURCE VOLTAGE V (V)
GS
Threshold Voltage
-1.2
-1.0
-0.8
I =-250uA
D
-0.6
-0.4
-0.1
0.0
-0.4
-0.8
-1.2
-1.6
-2.0
SOURCE TO DRAIN VOLTAGE V (V)
SD
-0.2
25
50
75
100
125
150
JUNCTION TEMPERATURE T (℃)
j
High Diode Semiconductor
3