HD2301 Datasheet, PDF (1/5 Pages) Jiangsu High diode Semiconductor Co., Ltd – SOT-23 Plastic-Encapsulate MOSFET

HD2301
SOT-23 Plastic-Encapsulate MOSFET
P -Channel MOSFET
Product Summary
V(BR)DSS
-20V
RDS(on)MAX
110mΩ@-4.5V
140mΩ@-2.5V
ID
-4.0A
SOT- 23
D
Features
● _{TrenchFET Power MOSFET}
● Excellent R_DS(on) and Low Gate Charge
Applications
● _{Load Switch for Portable Devices}
● DC/DC Converter
Marking:
● _S1
S
G
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (t=300µs)
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID
IDM
PD
RθJA
TJ
TSTG
Value
-20
±12
-4.0
-10
0.35
357
150
-55~ +150
Unit
V
V
A
A
W
℃/W
℃
℃
High Diode Semiconductor
1