HD2301 Datasheet, PDF (2/5 Pages) Jiangsu High diode Semiconductor Co., Ltd – SOT-23 Plastic-Encapsulate MOSFET

Electrical Characteristics (T_A=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Static Characteristics
Drain-source breakdown voltage
V(BR)DSS VGS = 0V, ID =-250µA
Zero gate voltage drain current
IDSS
VDS =-20V,VGS = 0V
Gate-body leakage current
IGSS
VGS =±12V, VDS = 0V
Gate threshold voltage (note 1)
VGS(th)
VDS =VGS, ID =-250µA
Drain-source on-resistance (note 1)
RDS(on)
VGS =-4.5V, ID =-3A
VGS =-2.5V, ID =-2A
Forward tranconductance (note 1)
gFS
VDS =-5V, ID =-2A
Dynamic characteristics (note 2)
Input Capacitance
Ciss
Output Capacitance
Coss
VDS =-10V,VGS =0V,f =1MHz
Reverse Transfer Capacitance
Crss
Gate resistance
Rg
f =1MHz
Total Gate Charge
Qg
Gate-Source Charge
Qgs
VDS =-10V,VGS =-2.5V,ID=-3A
Gate-Drain Charge
Qgd
Turn-on delay time
td(on)
Turn-on rise time
Turn-off delay time
tr
td(off)
VDD=-10V,VGEN=-4.5V,ID=-1A
RL=10Ω,RGEN=1Ω
Turn-off fall time
tf
Source-Drain Diode characteristics
Diode forward current
IS
TC=25℃
Diode pulsed forward current
ISM
Diode Forward voltage (note 1)
VDS
VGS =0V, IS=-1.3A
Notes:
1. Pulse test; pulse width≤300μs, duty cycle≤2%.
Min Type Max Unit
-20
V
-1
µA
±100
nA
-0.4
-1
V
70
110
mΩ
110 140
5
S
405
pF
75
pF
55
pF
6
Ω
3.3
12
nC
0.7
nC
1.3
nC
11
ns
35
ns
30
ns
10
ns
-3
A
-10
A
-1.2
V
High Diode Semiconductor
2