CD22101 Datasheet, PDF (3/13 Pages) Harris Corporation – CMOS 4 x 4 x 2 Crosspoint Switch with Control Memory

CD22101, CD22102
Electrical Specifications T_A = 25^oC
TEST CONDITIONS
PARAMETER
f_IS
SYMBOL FIGURE (kHz)
R_L
V_IS (V)
V_DD
(kΩ) (Note 3) (V)
DYNAMIC CROSSPOINTS
Propagation Delay Time,
t_PHL, t_PLH
5
(Switch ON) Signal Input to Output
-
-
5
5
-
10
10
10
15
15
Frequency Response (Any Switch
f_3dB
ON)
C_L = 50pF; t_R , t_F = 20ns
19
1
1
5
10
Sine Wave Input, 20logV--_V--^O--_I-_S--^S-- = -3dB
Sine Wave Response (Distortion)
THD
-
1
1
2.5
5
1
1
5
10
1
1
7.5
15
Feedthrough (All Switches OFF)
F_DT
13
1.6
0.6 2 (Note 4) 10
Sine Wave Input
Frequency for Signal Crosstalk
Attenuation of 40dB
F_CT
12
-
0.6 1 (Note 4) 10
Attenuation of 95dB
Sine Wave Input
Capacitance:
X_N to Ground
Y_N to Ground
Feedthrough
DYNAMIC CONTROLS
C_IS
C_IOS
-
-
-
-
-
-
-
-
-
Propagation Delay Time: High
t_PZH, t_PZL
6
R_L = 1kΩ, C_L = 50pF,
5
Impedance to High Level or Low
t_R, t_F = 20ns
Level
Strobe to Output, CD22101
10
15
Data-In to Output, CD22101
t_PZH, t_PZL
7
R_L = 1kΩ, C_L = 50pF,
5
t_R, t_F = 20ns
10
15
K_A to Output, CD22102
t_PZH, t_PZL
-
R_L = 1kΩ, C_L = 50pF,
5
t_R, t_F = 20ns
10
15
Address to Output
t_PZH, t_PZL
8
R_L = 1kΩ, C_L = 50pF,
5
CD22101, CD22102
t_R, t_F = 20ns
10
15
MIN TYP MAX UNITS
-
30 60
ns
-
15 30
ns
-
10 20
ns
-
40
-
MHz
-
1
-
%
- 0.25 -
%
- 0.15 -
%
-
-96
-
dB
-
2.5
-
MHz
0.1
kHz
-
25
-
pF
-
60
-
pF
-
0.6
-
pF
-
500 1000 ns
-
230 460
ns
-
170 340
ns
-
515 1000 ns
-
220 440
ns
-
170 340
ns
-
500 1000 ns
-
215 430
ns
-
160 320
ns
-
480 960
ns
-
225 450
ns
-
155 300
ns
4-195