HMN1M8DV Datasheet, PDF (7/9 Pages) Hanbit Electronics Co.,Ltd – Non-Volatile SRAM MODULE 8Mbit (1024k x 8bit) 36Pin-DIP, 3.3V

HANBit
HMN1M8DV
- READ CYCLE NO.3 (/OE Access)^*1,5
Address
/OE
DOUT
High-Z
tRC
tACC
tOE
tOLZ
tOHZ
Data Valid
NOTES: 1. /WE is held high for a read cycle.
2. Device is continuously selected: /CE = /OE =V_IL.
3. Address is valid prior to or coincident with /CE transition low.
4. /OE = V_IL.
5. Device is continuously selected: /CE = V_IL
High-Z
- WRITE CYCLE NO.1 (/WE-Controlled)^*1,2,3
Address
/CE
/WE
DIN
DOUT
tWC
tAW
tWR1
tCW
tAS
tWP
Data Undefined (1)
tDW
tDH1
Data-in Valid
tWZ
tOW
High-Z
URL:www.hbe.co.kr
Rev.0.0 (FEBRUARY/ 2002)
7
HANBit Electronics Co.,Ltd