HMN1M8DV Datasheet, PDF (4/9 Pages) Hanbit Electronics Co.,Ltd – Non-Volatile SRAM MODULE 8Mbit (1024k x 8bit) 36Pin-DIP, 3.3V

HANBit
HMN1M8DV
DC ELECTRICAL CHARACTERISTICS (T_A= T_OPR, V_CCmin £ V_CC≤ V_CCmax )
PARAMETER
CONDITIONS
SYMBOL
MIN
TYP.
Input Leakage Current
Output Leakage Current
Output high voltage
Output low voltage
Power-fail Deselect Voltage
V_IN=V_SS to V_CC
/CE=V_IH or /OE=V_IH
or /WE=V_IL
I_OH=-1.0mA
I_OL= 2.0mA
Threshold
Select
Voltage
(THS = V_SS )
I_LI
I_LO
V_OH
V_OL
V_PFD
-
-
-
-
2.4
-
-
-
2.8
2.9
Standby supply current
/CE=2.2v
I_SB
/CE≥ V_CC-0.2V,
Standby supply current
0V≤ V_IN≤ 0.2V,
I_SB1
or V_IN≥ V_CC-0.2V
Operating Power supply /CE=VIL, II/O=0㎃ ,
current
V_IN = V_IL or V_IH, Read
I_CC
Supply switch-over voltage
V_SO
-
-
-
-
-
-
2.5
MAX
± 3.0
± 3.0
-
0.4
3.0
0.6
30
12
-
UNIT
mA
mA
V
V
V
㎃
mA
㎃
V
CHARACTERISTICS (Test Conditions)
PARAMETER
Input pulse levels
Input rise and fall times
Input and output timing reference
levels
Output load (CL¹⁾ =30pF+1TTL)
(CL¹⁾ =100pF+1TTL)
VALUE
0.4 to 2.2V
5 ns
5V
( unless otherwise specified)
See Figures
Note : Including scope and jig capacitance
+5V
DOUT
1.9KΩ
DOUT
100㎊
1KΩ
1KΩ
+5V
1.9KΩ
5㎊
Figure 1.
Output Load A
Figure 2.
Output Load B
URL:www.hbe.co.kr
Rev.0.0 (FEBRUARY/ 2002)
4
HANBit Electronics Co.,Ltd