HMN328D Datasheet, PDF (6/9 Pages) Hanbit Electronics Co.,Ltd – Non-Volatile SRAM MODULE 256Kbit (32K x 8-Bit),28Pin DIP, 5V

HANBit
HMN328D
POWER-DOWN/POWER-UP CYCLE (T_A= T_OPR, V_CC=5V)
PARAMETER
SYMBOL
CONDITIONS
MIN
V_CC slew, 4.75 to 4.25V
t_PF
300
V_CC slew, 4.75 to V_SO
t_FS
10
V_CC slew, V_SO to V_PFD (max)
t_PU
0
Time during which SRAM
Chip enable recovery time
t_CER
is write-protected after V_CC
40
passes V_PFD on power-up.
Data-retention time in
Absence of V_CC
Data-retention time in
Absence of V_CC
t_DR
T_A = 25℃
10
T_A = 25℃ ; industrial
t_DR-N
temperature range (-N) only
6
Write-protect time
Delay after V_CC slews down
t_WPT
past V_PFD before SRAM is
40
Write-protected.
TYP.
-
-
-
MAX
-
-
-
UNIT
㎲
㎲
㎲
80
120
ms
-
-
years
-
-
years
100
150
㎲
TIMING WAVEFORM
- READ CYCLE NO.1 (Address Access)*^1,2
Address
DOUT
tRC
tACC
tOH
Previous Data Valid
Data Valid
- READ CYCLE NO.2 (/CE Access)^*1,3,4
tRC
/CE
DOUT
tACE
tCLZ
High-Z
tCHZ
High-Z
URL : www.hbe.co.kr
Rev. 0.0 (April, 2002)
6
HANBit Electronics Co.,Ltd