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HMN328D Datasheet, PDF (4/9 Pages) Hanbit Electronics Co.,Ltd – Non-Volatile SRAM MODULE 256Kbit (32K x 8-Bit),28Pin DIP, 5V
HANBit
HMN328D
DC ELECTRICAL CHARACTERISTICS (TA= TOPR, VCCmin £ VCC≤ VCCmax )
PARAMETER
CONDITIONS
SYMBOL
MIN
TYP.
Input Leakage Current
Output Leakage Current
Output high voltage
Output low voltage
Standby supply current
Standby supply current
VIN=VSS to VCC
/CE=VIH or /OE=VIH
or /WE=VIL
IOH=-1.0mA
IOL= 2.1mA
/CE=VIH
/CE≥ VCC-0.2V,
0V≤ VIN≤ 0.2V,
or VIN≥ VCC-0.2V
ILI
-
-
ILO
-
-
VOH
2.4
-
VOL
-
-
ISB
-
4
ISB1
-
2.5
Min.cycle,duty=100%,
Operating supply current
/CE=VIL, II/O=0㎃
ICC
-
55
Power-fail-detect voltage
VPFD
4.30
4.37
Supply switch-over voltage
VSO
-
3
MAX
±1
±1
-
0.4
1
100
15
4.50
-
UNIT
mA
mA
V
V
㎃
mA
㎃
V
V
CAPACITANCE (TA=25℃ , f=1MHz, VCC=5.0V)
DESCRIPTION
CONDITIONS
Input Capacitance
Input voltage = 0V
Input/Output Capacitance
Output voltage = 0V
SYMBOL
CIN
CI/O
MAX
10
10
MIN
UNIT
-
pF
-
pF
CHARACTERISTICS (Test Conditions)
PARAMETER
VALUE
Input pulse levels
0 to 3V
Input rise and fall times
5 ns
Input and output timing
1.5V
reference levels
( unless otherwise specified)
Output load
(including scope and jig)
See Figures 1and 2
+5V
DOUT
1.9KΩ
DOUT
100㎊
1KΩ
1KΩ
+5V
1.9KΩ
5㎊
Figure 1.
Output Load A
Figure 2.
Output Load B
URL : www.hbe.co.kr
Rev. 0.0 (April, 2002)
4
HANBit Electronics Co.,Ltd