HMN328D Datasheet, PDF (1/9 Pages) Hanbit Electronics Co.,Ltd – Non-Volatile SRAM MODULE 256Kbit (32K x 8-Bit),28Pin DIP, 5V

HANBit
HMN328D
Non-Volatile SRAM MODULE 256Kbit (32K x 8-Bit),28Pin DIP, 5V
Part No. HMN328D
GENERAL DESCRIPTION
The HMN328D nonvolatile SRAM is a 262,144-bit static RAM organized as 32,768 bytes by 8 bits.
The HMN328D has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write
cycles of standard SRAM and integral control circuitry which constantly monitors the single 5V supply for an out-of-
tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on to sustain the
memory until after V_CC returns valid and write protection is unconditionally enabled to prevent garbled data. In addition the
SRAM is unconditionally write-protected to prevent an inadvertent write operation. At this time the integral energy source is
switched on to sustain the memory until after V_CC returns valid.
The HMN328D uses extremely low standby current CMOS SRAM’s, coupled with small lithium coin cells to provide non-
volatility without long write-cycle times and the write-cycle limitations associated with EEPROM.
FEATURES
w Access time : 70, 85, , 120, 150 ns
w High-density design : 256Kbit Design
w Battery internally isolated until power is applied
w Industry-standard 28-pin 32K x 8 pinout
w Unlimited write cycles
w Data retention in the absence of V_CC
w 10-years minimum data retention in absence of power
w Automatic write-protection during power-up/power-down
cycles
w Data is automatically protected during power loss
w Industrial temperature operation
OPTIONS
w Timing
70 ns
85 ns
120 ns
150 ns
MARKING
- 70
- 85
-120
-150
PIN ASSIGNMENT
A14
1
A12
2
A7
3
A6
4
A5
5
A4
6
A3
7
A2
8
A1
9
A0 10
DQ0 11
DQ1 12
DQ2 13
VSS
14
28
VCC
27 _/WE
26
A13
25
A8
24
A9
23
A11
22 _/O
21
AE10
20 _/CE
19 _DQ7
18 _DQ6
17 DQ5
16 DQ4
15 DQ3
28-pin Encapsulated Package
URL : www.hbe.co.kr
Rev. 0.0 (April, 2002)
1
HANBit Electronics Co.,Ltd