HMN1M8DVN Datasheet, PDF (6/9 Pages) Hanbit Electronics Co.,Ltd – Non-Volatile SRAM MODULE 8Mbit (1024k x 8bit) 40Pin - DIP, 3.3V

HANBit
HMN1M8DVN
POWER-DOWN/POWER-UP CYCLE
PARAMETER
SYMBOL
CONDITIONS
MIN
V_PFD(max) to V_PFD(min) V_CC Fail Time
t_F
300
V_PFD(max) to V_SS V_CC Fail Time
t_FB
150
V_PFD(max) to V_PFD(min) V_CC Rise Time
t_R
10
Delay after Vcc slews down
Write Protect Time
t_WPT
past V_PFD before SRAM is
40
Write-protected.
Chip Enable Recovery
t_CER
40
V_SS to V_PFD (min) V_CC Rise Time
t_RB
1
TYP.
-
-
-
MAX
-
-
-
UNIT
µs
µs
µs
250
µs
-
120
ms
-
-
µs
TIMING WAVEFORM
- READ CYCLE NO.1 (Address Access)*^1,2
Address
DOUT
tRC
tACC
tOH
Previous Data Valid
- READ CYCLE NO.2 (/CE Access)^*1,3,4
tRC
/CE
DOUT
tACE
tCLZ
High-Z
Data Valid
tCHZ
High-Z
URL:www.hbe.co.kr
Rev.0.0 (January/ 2003)
6
HANBit Electronics Co.,Ltd