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| HMN1M8DVN Datasheet, PDF (3/9 Pages) Hanbit Electronics Co.,Ltd – Non-Volatile SRAM MODULE 8Mbit (1024k x 8bit) 40Pin - DIP, 3.3V | |||
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HANBit
HMN1M8DVN
TRUTH TABLE
MODE
/OE
/CE
/WE
I/O OPERATION
POWER
Not selected
X
H
X
High Z
Standby
Output disable
H
L
H
High Z
Active
Read
Write
L
L
H
X
L
L
DOUT
DIN
Active
Active
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
CONDITIONS
DC voltage applied on VCC relative to VSS
DC Voltage applied on any pin excluding VCC relative to
VSS
Operating temperature
VCC
VT
TOPR
-0.5V to Vcc+0.5
-0.3V to 4.6V
0 to 70°C
VT⤠VCC+0.3
Storage temperature
TSTG
-65°C to 150°C
Soldering temperature
TSOLDER
260°C
For 10 second
NOTE: Permanent device damage may occur if Absolute Maximum Ratings are exceeded.
Functional operation should be restricted to the Recommended DC Operating Conditions detailed in this data sheet.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
RECOMMENDED DC OPERATING CONDITIONS ( TA= TOPR )
PARAMETER
SYMBOL
MIN
TYPICAL
Supply Voltage
VCC
3.0V
3.3V
Ground
Input high voltage
VSS
0
0
VIH
2.2
-
Input low voltage
VIL
-0.3
-
NOTE: Typical values indicate operation at TA = 25â
MAX
3.6V
0
VCC+0.3
0.6V
CAPACITANCE (TA=25â , f=1MHz, VCC=3.3V)
DESCRIPTION
CONDITIONS
Input Capacitance
Input voltage = 0V
Input/Output Capacitance
Output voltage = 0V
1. Only sampled, not 100% tested
SYMBOL
CIN
CI/O
MAX
8
10
MIN
UNIT
-
pF
-
pF
URL:www.hbe.co.kr
Rev.0.0 (January/ 2003)
3
HANBit Electronics Co.,Ltd
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