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S11500-1007 Datasheet, PDF (7/7 Pages) Hamamatsu Corporation – Enhanced near infrared sensitivity: QE=40% (λ=1000 nm), back-thinned FFT-CCD
CCD area image sensor
S11500-1007
Precaution for use (electrostatic countermeasures)
O When handling CCD sensors, always wear a wrist strap and also anti-static clothing, gloves, and shoes, etc. The wrist strap should have a pro-
tective resistor (about 1 MΩ) on the side closer to the body and be grounded properly. Using a wrist strap having no protective resistor is haz-
ardous because you may receive an electrical shock if electric leakage occurs.
O Avoid directly placing these sensors on a work bench that may carry an electrostatic charge.
O Provide ground lines with the work bench and work floor to allow static electricity to discharge.
O Ground the tools used to handle these sensors, such as tweezers and soldering irons.
It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the amount of damage
that occurs.
Element cooling/heating temperature incline rate
When cooling the CCD by an externally attached cooler, set the cooler operation so that the temperature gradient (rate of temperature change)
for cooling or allowing the CCD to warm back is less than 5 K/minute.
Features
Multichannel detector head C7040
Area scanning or line-binnng operation
Readout frequency: 250 kHz
Readout noise: 20 e- rms
Input
Supply voltage
Master start
Master clock
Symbol
VD1
VA1+
VA1-
VA2
φms
φmc
Specification
+5 Vdc, 200 mA
+15 Vdc, +100 mA
-15 Vdc, -100 mA
+24 Vdc, 30 mA
HCMOS logic compatible
HCMOS logic compatible,
1 MHz
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein.
Type numbers of products listed in the specification sheets or supplied as samples may have a suffix “(X)” which means tentative specifications or a suffix “(Z)”
which means developmental specifications. ©2010 Hamamatsu Photonics K.K.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
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France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
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Cat. No. KMPD1125E04 Aug. 2010 DN