S11500-1007 Datasheet, PDF (1/7 Pages) Hamamatsu Corporation – Enhanced near infrared sensitivity: QE=40% (λ=1000 nm), back-thinned FFT-CCD

IR-enhanced CCD area image sensor
S11500-1007
Enhanced near infrared sensitivity: QE=40% (λ=1000 nm),
back-thinned FFT-CCD
The S11500-1007 is an FFT-CCD image sensor for photometric applications that offers improved sensitivity in the near infrared
region at wavelengths longer than 800 nm. Our unique technology in laser processing was used to form a MEMS structure on the
back side of the CCD. This allows the S11500-1007 to have much higher sensitivity than our conventional product (S7030-1007).
In addition to having high near infrared sensitivity, the S11500-1007 can be used as an image sensor with a long active area in the
direction of the sensor height by binning operation, making it suitable for detectors in Raman spectroscopy. Binning operation also
ensures even higher S/N and signal processing speed compared to methods that use an external circuit to add signals digitally.
The S11500-1007 has a pixel size of 24 × 24 μm and active area of 24.576 (H) × 2.928 (V) mm (1024 × 122 pixels). The S11500-
1007 is pin compatible with the S7030-1007, and so operates under the same drive conditions.
Features
Enhanced near infrared sensitivity: QE=40% (λ=1000 nm)
Pixel size: 24 × 24 μm
Line, pixel binning
Wide spectral response range
Low readout noise
Wide dynamic range
MPP operation
Applications
Raman spectrometer, etc.
Spectral response (without window)*¹
100
(Typ. Ta=25 °C)
90
S11500-1007
80
70
60
Conventional type
(S7030-1007)
50
40
30
20
10
0
200
Front-illuminated CCD
400
600
800
1000
1200
Wavelength (nm)
KMPDB0325EC
*1: Spectral response with quartz glass is decreased according to
the spectral transmittance characteristic of window material.
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