S10747-0909 Datasheet, PDF (6/7 Pages) Hamamatsu Corporation – Enhanced near-infrared sensitivity by using fully-depleted CCD technology

CCD area image sensor
Dimensional outline (unit: mm)
34 ± 0.34
Active area
12.288
24 23
14 13
S10747-0909
12
Index mark
1st pin
11 12
Photosensitive surface
(24 ×) 0.5
KMPDA0256EA
Pin connections
Pin no.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Symbol
RD
OS
OD
OG
SG
-
-
P2H
P1H
IG2H
IG1H
ISH
TG
P2V
P1V
-
-
-
SS
-
ISV
IG2V
IG1V
RG
Function
Reset drain
Output transistor source
Output transistor drain
Output gate
Summing gate
CCD horizontal register clock-2
CCD horizontal register clock-1
Test point (horizontal input gate-2)
Test point (horizontal input gate-1)
Test point (horizontal input source)
Transfer gate
CCD vertical register clock-2
CCD vertical register clock-1
Substrate voltage (applied bias voltage)
Test point (vertical input source)
Test point (vertical input gate-2)
Test point (vertical input gate-1)
Reset gate
Remark
(standard operation)
-12 V
RL=22 kΩ
-20 V
-5 V
0V
0V
Connect to RD
+20 V
Connect to RD
0V
0V
6