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S10747-0909 Datasheet, PDF (1/7 Pages) Hamamatsu Corporation – Enhanced near-infrared sensitivity by using fully-depleted CCD technology
CCD area image sensor
S10747-0909
Enhanced near-infrared sensitivity
by using fully-depleted CCD technology
The S10747-0909 is a back-illuminated CCD area image sensor that has significantly improved near-infrared sensitivity and soft
X-ray detection efficiency. This has been achieved by using a thick silicon substrate that allows the depletion layer to be thickened
by applying a bias voltage.
Features
Quantum efficiency: 70% (λ=1000 nm, Ta=25 °C)
Pixel size: 24 × 24 μm
512 × 512 pixels
Low readout noise
Applications
Space telescope
Spectral response (without window)
(Typ. Ta=25 °C)
100
90
80
70
60
50
Back-thinned CCD
40
30
S10747-0909
20
10
0
200
400
600
800
1000 1200
Wavelength (nm)
KMPDB0313EA
General ratings
Parameter
Pixel size
Number of pixels
Number of active pixels
Active area
Vertical clock phase
Horizontal clock phase
Output circuit
Package
Window
Soft X-ray detection efficiency
(Calculated data, with AR coating)
100
80
60
40
Back-thinned CCD
20
0
0.1
S10747-0909
1
10
X-ray energy (keV)
100
KMPDB0317EA
Specification
24 (H) × 24 (V) μm
532 (H) × 520 (V)
512 (H) × 512 (V)
12.288 (H) × 12.288 (V) mm
2 phases
2 phases
One-stage MOSFET source follower
24-pin ceramic DIP (refer to dimensional outline)
None (temporary glass window)
www.hamamatsu.com
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