S10747-0909 Datasheet, PDF (3/7 Pages) Hamamatsu Corporation – Enhanced near-infrared sensitivity by using fully-depleted CCD technology

CCD area image sensor
S10747-0909
Operating conditions (Ta=-70 °C)
Parameter
Output transistor drain voltage
Reset drain voltage
Output gate voltage
Substrate voltage
Vertical input source
Test point
Horizontal input source
Vertical input gate
Horizontal input gate
Vertical shift register clock voltage
High
Low
Horizontal shift register clock voltage
High
Low
Summing gate voltage
High
Low
Reset gate voltage
High
Low
Transfer gate voltage
High
Low
External load resistance
Symbol
VOD
VRD
VOG
VSS
VISV
VISH
VIG1V, VIG2V
VIG1H, VIG2H
VP1VH, VP2VH
VP1VL, VP2VL
VP1HH, VP2HH
VP1HL, VP2HL
VSGH
VSGL
VRGH
VRGL
VTGH
VTGL
RL
Min.
-22
-13
-6
0.5
-
-
-
-
-8
2
-8
2
-8
2
-8
2
-8
2
20
Typ.
-20
-12
-5
20
VRD
VRD
0
0
-7
3
-7
3
-7
3
-7
3
-7
3
22
Max.
-18
-11
-4
25
-
-
3
3
-6
4
-6
4
-6
4
-6
4
-6
4
24
Electrical characteristics (Ta=25 °C)
Parameter
Symbol
Min.
Signal output frequency
fc
-
Vertical shift register capacitance
CP1V, CP2V
-
Horizontal shift register capacitance
CP1H, CP2H
-
Summing gate capacitance
CSG
-
Reset gate capacitance
CRG
-
Transfer gate capacitance
Charge transfer efficiency*¹
DC output level*²
Output impedance*²
Power consumption*² *³
CTG
CTE
Vout
Zo
P
-
0.99995
-15
-
-
*1: Charge transfer efficiency per pixel measured at half of the full well capacity
*2: The values depend on the load resistance. (VOD=-20 V, load resistance=22 kΩ)
*3: Power consumption of the on-chip amplifier plus load resistance
Typ.
-
600
110
20
30
60
0.99999
-13
3
12
Max.
150
-
-
-
-
-
-
-11
-
13
Electrical and optical characteristics (Ta=-70 °C, unless otherwise noted)
Parameter
Symbol
Min.
Typ.
Max.
Saturation output voltage
Vsat
-
Fw × Sv
-
Full well capacity
Vertical
Horizontal, summing gate
Fw
150
600
200
800
-
-
CCD node sensitivity*⁴
Sv
1.4
1.7
2.0
Dark current*⁵
DS
-
1
10
Readout noise*⁶
Nr
-
30
60
Dynamic range*⁷
Line binning
Area scanning
Photo response non-uniformity*⁸
DR
20000
26667
-
5000
6666
-
PRNU
-
±3
±10
Spectral response range Ta=25 °C
λ
-
300 to 1100
-
*4: Load resistance=22 kΩ
*5: Dark current is reduced to half for every 5 to 7 °C decrease in temperature.
*6: Operating frequency=150 kHz
*7: Dynamic range = Full well capacity / Readout noise
*8: Measured at one-half of the saturation output (full well capacity) using LED light (peak emission wavelength: 560 nm)
Fixed pattern noise (peak to peak)
Photo response non-uniformity (PRNU) =
× 100 [%]
Signal
Unit
V
V
V
V
V
V
V
V
V
V
V
V
V
kΩ
Unit
kHz
pF
pF
pF
pF
pF
-
V
kΩ
mW
Unit
V
ke^-
μV/e^-
e^-/pixel/s
e^- rms
-
-
%
nm
3