S11153-01MT_15 Datasheet, PDF (4/6 Pages) Hamamatsu Corporation – Photo IC diode

Photo IC diode
S11153-01MT
Block diagram
Photodiode
for signal offset
Cathode
The drawing surrounded
by the dotted line shows
a schematic diagram of
the photo IC.
Current amp
(approx. 30000 times)
Photodiode
for signal detection
Internal protection
resistance
(approx. 150 Ω)
The photo IC diode must be reverse-biased so
that a positive potential is applied to the cathode.
To eliminate high-frequency components, we rec-
ommend placing a load capacitance CL in parallel
with load resistance RL as a low-pass filter.
1
Cut-off frequency fc
2π CL RL
Reverse bias
power supply
Anode
Vout
CL
RL
Dimensional outline (unit: mm)
3.5 ± 0.2
3.2
Photosensitive area
0.32 × 0.46
KPICC0132EA
Silicone resin
0.8
ϕ2.4
0.5
1.0
4.5
1.5
0.8 ± 0.2
ϕ1.0
1.5
3.1
0.8 ± 0.2
Recommended land pattern
Cathode
Anode
Tolerance unless otherwise
noted: ±0.1
Chip position accuracy with
respect to package center
X, Y ±0.2
Electrode
Packing: reel (1000 pcs/reel)
KPICA0087EB
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