S11153-01MT_15 Datasheet, PDF (1/6 Pages) Hamamatsu Corporation – Photo IC diode

Photo IC diode
S11153-01MT
Wide operating temperature: -40 to +105 °C
The S11153-01MT photo IC has a spectral response close to human eye sensitivity. Two active areas are made on a single chip.
Almost only the visible range can be measured by finding the difference between the two output signals in the internal current
amplifier circuit. Compared to the previous type, the S11153-01MT has a wide operating temperature range (-40 to +105 °C).
Features
Wide operating temperature: -40 to +105 °C
Spectral response close to human eye sensitivity
Lower output-current variation compared with
phototransistors
Excellent linearity
Low output deviation by different color temperature
light source
Suitable for lead-free reflow (RoHS compliance)
Applications
Automotive illuminance sensor
Energy-saving sensor for TVs, etc.
Various types of light level measurement
Absolute maximum ratings (Ta=25 °C)
Parameter
Symbol
Condition
Value
Unit
Reverse voltage
VR
-0.5 to +12
V
Photocurrent
IL
5
mA
Forward current
Power dissipation*¹
Operating temperature
Storage temperature
Reflow soldering conditions*³
IF
5
mA
P
300
mW
Topr No dew condensation*²
-40 to +105
°C
Tstg
No dew condensation*²
-40 to +125
°C
Tsol
Peak temperature 250 °C max., two times
-
*1: Power dissipation decreases at a rate of 3.0 mW/°C above Ta=25 °C.
*2: When there is a temperature difference between a product and the surrounding area in high humidity environment, dew
condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and
reliability.
*3: JEDEC level 4
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
Electrical and optical characteristics (Ta=25 °C)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Spectral response range
λ
-
300 to 820
-
nm
Peak sensitivity wavelength
λp
-
560
-
nm
Dark current
ID
VR=5 V
-
1.0
50
nA
Photocurrent
IL
VR=5 V, 2856 K, 100 lx
325
-
495
μA
Rise time*⁴
tr
10 to 90%, VR=7.5 V
RL=10 kΩ, λ=560 nm
-
6.0
-
ms
Fall time*⁴
tf
90 to 10%, VR=7.5 V
RL=10 kΩ, λ=560 nm
-
2.5
-
ms
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