S11153-01MT_15 Datasheet, PDF (2/6 Pages) Hamamatsu Corporation – Photo IC diode

Photo IC diode
S11153-01MT
*4: Rise/fall time measurement method
Pulsed light
from LED
(λ=560 nm)
VO
Load
resistance RL
0.1 μF
90 %
VO
10 %
7.5 V
tr
2.5 V
tf
Spectral response
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
200
400
600
(Typ. Ta=25 °C, VR=5 V)
Human eye sensitivity
S11153-01MT
800
1000 1200
Wavelength (nm)
KPICB0157EB
KPICC0041EA
Photocurrent vs. illuminance
10 mA
(Typ. Ta=25 °C, VR=5 V, 2856 K)
1 mA
100 μA
10 μA
1 μA
100 nA
0.1
1
10
100
1000 10000
Illuminance (lx)
KPICB0158EB
2