S10604-200CT_15 Datasheet, PDF (4/7 Pages) Hamamatsu Corporation – Photo IC diode

Photo IC diode
S10604-200CT
Operating circuit example
Photodiode
for signal offset
Cathode
Photodiode
for signal detection
The drawing surrounded
by the dotted line shows
a schematic diagram of
the photo IC.
Current amp
(approx. 30000 times)
Internal protection
resistance
(approx. 150 Ω)
Reverse bias
power supply
Anode
Vout
CL
RL
KPICC0132EA
The photo IC diode must be reverse-biased so that a positive potential is applied to the cathode.
To eliminate high-frequency components, we recommend placing a load capacitance CL in parallel with load resistance RL as a low-
pass filter.
Cutoff
frequency
fc
≈
1
2πCLRL
Dimensional outline (unit: mm)
2.0
1.4
(0.25)
1.0 1.0 1.0
Index mark
Photosensitive area
0.32 × 0.46
Recommended
land pattern
0.4
0.4
Cathode
Anode
Tolerance unless otherwise
noted: ±0.2
Values in parentheses indicate
reference value.
Electrode
Standard packing: reel (3000 pcs/reel)
KPICA0072EB
4