S8865 Datasheet, PDF (3/6 Pages) Hamamatsu Corporation – Photodiode array combined with signal processing circuit chip

Photodiode array with amplifier S8865 series
I Electrical/optical characteristics [Ta=25 °C, Vdd=5 V, V (CLK)=V (RESET)=5 V, Vgain=5 V (High gain), 0 V (Low gain)]
Parameter
Symbol
S8865-64
Min.
Typ.
Max.
S8865-128
Min.
Typ.
Max.
Unit
Spectral response range
l
200 to 1000
nm
Peak sensitivity wavelength
lp
-
720
-
-
720
-
nm
Dark output
voltage *^$
High gain
Low gain
Vd
-
-
0.02
0.2
0.01
0.1
-
-
0.01
0.005
0.1
0.05
mV
Saturation output voltage
Vsat
-
3.5
-
-
3.5
-
V
Saturation
exposure *^%
High gain
Low gain
Esat
-
-
0.8
1.6
-
-
-
2.4
-
mlx^·^s
-
4.8
-
Photo
sensitivity
High gain
Low gain
S
-
4400
-
-
2200
-
-
1500
-
V/lx^·^s
-
750
-
Photo response non-uniformity *^& PRNU
-
-
±10
-
-
±10
%
Noise *^'
High gain
Low gain
N
-
-
1
0.6
-
-
-
-
1
0.6
-
-
mVrms
Output offset voltage *
Vos
-
Vref
-
-
Vref
-
V
*6: Integration time ts=1 ms
*7: Measured with a 2856 K tungsten lamp.
*8: When the photodiode array is exposed to uniform light which is 50 % of the saturation exposure, the Photo Response Non-
Uniformity (PRNU) is defined as follows:
PRNU = DX/X × 100 (%)
where X is the average output of all elements and DX is the difference between the maximum and minimum outputs.
*9: Measured with a video data rate of 50 kHz and Ts=1 ms in dark state.
*10: Video output is negative-going output with respect to the output offset voltage.
I Output waveform of one element
DARK STATE
I Spectral response (measurement example)
(Ta=25 ˚C)
0.5
OUTPUT OFFSET
VOLTAGE
Vref=4.5 V Typ.
SATURATION OUTPUT
VOLTAGE
Vsat=3.5 V Typ.
1 V Typ.
SATURATION STATE
GND
KMPDC0152EA
I Block diagram
EXTSP
4
Vms
5
Vdd
GND
6
7
0.4
0.3
0.2
0.1
0
200
400
600
800
1000 1200
WAVELENGTH (nm)
KMPDB0220EA
RESET 1
CLK 2
Vref 10
Vgain 11
TIMING GENERATOR
SHIFT REGISTER
HOLD CIRCUIT
CHARGE AMP ARRAY
3 TRIG
8 EOS
9 Video
Vpd 12
12345
PHOTODIODE ARRAY
N-1 N
KMPDC0153EA
3