G1961 Datasheet, PDF (3/4 Pages) Hamamatsu Corporation – GaP photodiode

GaP photodiode G1961, G1962, G1963
sShunt resistance vs. ambient temperature
10 TΩ
(Typ. VR=10 mV)
1 TΩ
100 GΩ
10 GΩ
1 GΩ
G1961
G1962
G1963
100 MΩ
10 MΩ
-20
0
+20
+40
+60
AMBIENT TEMPERATURE (˚C)
+80
KGPDB0018EA
sShort circuit current linearity
(Typ. Ta=25 ˚C, A light source fully illuminated)
10⁰
10^-2
RL=100 Ω
10^-4
10^-6
10^-8
10^-10
10^-12
10^-14
DEPENDENT ON NEP
10^-1₁⁶_{0-16 10-14 10-12 10-10 10-8 10-6 10-4 10-2 100}
INCIDENT LIGHT LEVEL (lx)
KGPDB0008EA
sDimensional outlines (unit: mm)
➀ G1961
WINDOW
3.0 ± 0.2
5.4 ± 0.2
4.7 ± 0.1
➁ G1962
WINDOW
5.9 ± 0.1
9.1 ± 0.2
8.1 ± 0.1
PHOTOSENSITIVE
SURFACE
0.45
LEAD
2.54 ± 0.2
PHOTOSENSITIVE
SURFACE
0.45
LEAD
5.08 ± 0.2
CONNECTED
TO CASE
KGPDA0005EA
CONNECTED
TO CASE
KGPDA0006EA