G1961 Datasheet, PDF (2/4 Pages) Hamamatsu Corporation – GaP photodiode

sSpectral response
0.2
GaP photodiode G1961, G1962, G1963
(Typ. Ta=25 ˚C)
sPhoto sensitivity temperature characteristic
(Typ.)
+1.5
0.15
+1.0
0.1
+0.5
0.05
0
0
190
400
600
WAVELENGTH (nm)
800
KGPDB0014EA
-0.5
190
400
600
WAVELENGTH (nm)
800
KGPDB0017EB
sRise time vs. load resistance
10 ms
(Typ. Ta=25 ˚C, VR=0 V)
1 ms
100 µs
10 µs
G1963
G1962
G1961
1 µs
sDark current vs. reverse voltage
1 nA
(Typ. Ta=25 ˚C)
100 pA
10 pA
1 pA
G1963
G1962
G1961
100 ns₁₀₂
10³
10⁴
10⁵
LOAD RESISTANCE (Ω)
10⁶
KGPDB0015EA
100 fA
0.001
0.01
0.1
1
REVERSE VOLTAGE (V)
10
KGPDB0016EA