G1961 Datasheet, PDF (1/4 Pages) Hamamatsu Corporation – GaP photodiode

PHOTODIODE
GaP photodiode
G1961, G1962, G1963
Schottky type
Features
l Low dark current
l High UV sensitivity
Applications
l Analytical instruments
l UV detection
s General ratings / Absolute maximum ratings
Type No.
G1961
G1962
G1963
Dimensional
outline/
Window
material
➀/Q *
➁/Q
➂/Q
Package
TO-18
TO-5
TO-8
Active area
size
(mm)
1.1 × 1.1
2.3 × 2.3
4.6 × 4.6
Effective
active
area
(mm²)
1.0
5.2
21
Absolute maximum ratings
Reverse
Operating
Storage
voltage
temperature temperature
VR Max.
Topr
Tstg
(V)
(°C)
(°C)
5
-10 to +60
-20 to +70
s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Type No.
G1961
G1962
G1963
Spectral Peak
response sensitivity
range wavelength
λ
λp
(nm) (nm)
Photo sensitivity
S
(A/W)
Short circuit
current
Isc
Hg
lx
λp line 400 nm
Dark
current
ID
Max.
Temp.
coefficient
of
ID
TCID
Rise time
tr
VR=0 V
RL=1 kΩ
Terminal
capacitance
Ct
VR=0 V
f=10 kHz
Shunt
resistance
Rsh
VR=10 mV
NEP
254 nm
Min. Typ. V4=10 mV V4=1 V
Min. Typ.
(µA) (µA) (pA) (pA) (times/°C) (µs) (pF) (GΩ) (GΩ) (W/Hz^1/2)
0.04 0.05 2.5 25
5
400 4 40 5.4 × 10^-15
190 to 550 440 0.12 0.03 0.1 0.23 0.3 5 50 1.11 10 1500 2 20 7.6 × 10^-15
0.75 0.9 10 100
30 5000 1 1 1.1 × 10^-14
* Window material Q: quartz glass