G11777_15 Datasheet, PDF (3/4 Pages) Hamamatsu Corporation – InGaAs PIN photodiode

InGaAs PIN photodiode
G11777-003P
Linearity
(Typ. Ta=25 °C, λ=1.55 µm, RL=2 Ω, VR=1 V)
102
100
Light spot size: 200 µm
98
96
Light spot size: 50 µm
94
92
90
0 2 4 6 8 10 12 14 16
Incident light level (mW)
KIRDB0475EA
Dark current vs. ambient temperature
100 nA
(Typ. VR=5 V)
10 nA
1 nA
100 pA
10 pA
1 pA
-40 -20 0
20 40 60 80 100
Ambient temperature (°C)
KIRDB0476EA
Recommended solder reflow condition
Ĵıı
Peak temperature 250 °C max.
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Time (s)
· After unpacking, store this device in an environment at a
temperature from 5 to 30 °C and a humidity below 60%, and
perform reflow soldering on this device within 72 hours.
· Thermal stress applied to the device during reflow soldering
differs depending on the PC boards and reflow oven being used.
· When setting the reflow conditions, make sure that the reflow
soldering process does not degrade device reliability.
KIRDB0470EA
3