G11777_15 Datasheet, PDF (2/4 Pages) Hamamatsu Corporation – InGaAs PIN photodiode

InGaAs PIN photodiode
G11777-003P
Spectral response
1.2
(Typ. Ta=25 °C)
1.0
0.8
0.6
0.4
0.2
0
0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9
Wavelength (µm)
KIRDB0474EA
Dark current vs. reverse voltage
10 nA
(Typ. Ta=25 °C)
Sensitivity temperature characteristic
(Typ. Ta=25 °C)
2
1
0
-1
0.8
1.0
1.2
1.4
1.6
1.8
Wavelength (µm)
KIRDB0042EA
Terminal capacitance vs. reverse voltage
(Typ. Ta=25 °C)
1 nF
1 nA
100 pA
10 pA
100 pF
10 pF
1 pA
0.01
0.1
1
10
Reverse voltage (V)
100
KIRDB0468EA
1 pF
0.01
0.1
1
10
Reverse voltage (V)
100
KIRDB0469EA
2