G11777_15 Datasheet, PDF (1/4 Pages) Hamamatsu Corporation – InGaAs PIN photodiode

InGaAs PIN photodiode
G11777-003P
Surface mounted type COB (chip on board) package
The G11777-003P is a small-size near infrared detector available in a surface mount COB (chip on board) package.
Its size is drastically reduced compared to the previous metal package type (G8376-03). The spectral response covers a
range from 0.9 to 1.7 μm (with peak sensitivity wavelength at 1.55 μm) and delivers high sensitivity and low noise. In
addition to optical communication, other applications include analysis and measurement utilizing near infrared light.
Features
Low noise
High sensitivity
High-speed response
Photosensitive area: φ0.3 mm
Surface mount type
Small size COB package
Low cost
Compatible lead-free reflow soldering
Applications
Measurement
Analysis
Optical light level monitor
Structure
Parameter
Symbol
Specification
Unit
Window material
-
Resin
-
Package
-
Photosensitive area
-
Surface mount type COB
-
φ0.3
mm
Absolute maximum ratings
Parameter
Symbol
Value
Unit
Reverse voltage
VR
10
V
Operating temperature
Topr
-25 to +80
°C
Storage temperature
Tstg
-40 to +85
°C
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
Electrical and optical characteristics (Ta=25 °C)
Parameter
Spectral response range
Peak sensitivity wavelength
Photosensitivity
Dark current
Cutoff frequency
Terminal capacitance
Shunt resistance
Detectivity
Noise equivalent power
Symbol
λ
λp
S
ID
fc
Ct
Rsh
D*
NEP
Condition
λ=1.3 μm
λ=λp
VR=5 V
VR=5 V, RL=50 Ω
VR=5 V, f=1 MHz
VR=10 mV
λ=λp
λ=λp
Min.
-
-
0.70
0.75
-
300
-
100
1 × 10¹²
-
Typ.
0.9 to 1.7
1.55
0.85
0.95
0.1
500
6
700
5 × 10¹²
5 × 10^-15
Max.
-
-
-
-
0.8
-
10
-
-
2 × 10^-14
Unit
μm
μm
A/W
nA
MHz
pF
MΩ
cm·Hz^1/2/W
W/Hz^1/2
The G11777-003P may be damaged by electrostatic discharge. Be carefull when using the G11777-003P.
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