S7017 Datasheet, PDF (2/8 Pages) Hamamatsu Corporation – CCD area image sensor

CCD area image sensor S7017 series
s Absolute maximum ratings (Ta=25 °C)
Parameter
Operating temperature
Storage temperature
OD voltage
RD voltage
ISV voltage
ISH voltage
IGV voltage
IGH voltage
SG voltage
OG voltage
RG voltage
TG voltage
Vertical clock voltage
Horizontal clock voltage
Symbol
Topr
Tstg
VOD
VRD
VISV
VISH
VIG1V, VIG2V
VIG1H, VIG2H
VSG
VOG
VRG
VTG
VP1V, VP2V
VP1H, VP2H
Min.
-50
-100
-0.5
-0.5
-0.5
-0.5
-10
-10
-10
-10
-10
-10
-10
-10
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
Unit
+30
°C
+70
°C
+25
V
+18
V
+18
V
+18
V
+15
V
+15
V
+15
V
+15
V
+15
V
+15
V
+15
V
+15
V
s Operating conditions (MPP mode, Ta=25 °C)
Parameter
Symbol
Output transistor drain voltage
VOD
Reset drain voltage
VRD
Output gate voltage
VOG
Substrate voltage
VSS
Test point (vertical input source)
VISV
Test point (horizontal input source)
VISH
Test point (vertical input gate)
VIG1V, VIG2V
Test point (horizontal input gate)
VIG1H, VIG2H
Vertical shift register
High
VP1VH, VP2VH
clock voltage
Low
VP1VL, VP2VL
Horizontal shift register
High
VP1HH, VP2HH
clock voltage
Low
VP1HL, VP2HL
Summing gate voltage
High
Low
VSGH
VSGL
Reset gate voltage
High
Low
VRGH
VRGL
Transfer gate voltage
High
Low
VTGH
VTGL
Min.
18
11.5
1
-
-
-
-8
-8
4
-9
4
-9
4
-9
4
-9
4
-9
Typ.
20
12
3
0
VRD
VRD
0
0
6
-8
6
-8
6
-8
6
-8
6
-8
Max.
Unit
22
V
12.5
V
5
V
-
V
-
V
-
V
-
V
-
V
8
-7
V
8
-7
V
8
-7
V
8
-7
V
8
-7
V
s Electrical characteristics (Ta=25 °C)
Parameter
Signal output frequency
Reset clock frequency
Vertical shift register
S7017-1007
capacitance
S7017-1008
Horizontal shift register capacitance
Summing gate capacitance
Reset gate capacitance
Transfer gate capacitance
Transfer efficiency
Symbol
Remark
Min.
Typ.
Max.
Unit
fc
-
-
80
2,000
kHz
frg
-
-
80
2,000
kHz
CP1V, CP2V
-
-
-
-
3,200
6,400
-
-
pF
CP1H, CP2H
-
-
300
-
pF
CSG
-
-
7
-
pF
CRG
-
-
7
-
pF
CTG
-
-
150
-
pF
CTE
*¹
0.99995 0.99999
-
-
DC output level
Vout
*²
12
15
18
V
Output impedance
Power dissipation
Zo
*²
-
3
-
kΩ
P
*^2, *³
-
15
-
mW
*1: Charge transfer efficiency per pixel, measured at half of the full well capacity.
*2: VOD=20 V , Load resistance=22 kΩ
*3: Power dissipation of the on-chip amplifier.
2