S11155-2048-01_15 Datasheet, PDF (1/8 Pages) Hamamatsu Corporation – CCD linear image sensors

CCD linear image sensors
S11155-2048-01 S11156-2048-01
Back-thinned CCD image sensors with
electronic shutter function
The S11155-2048-01 and S11156-2048-01 are back-thinned CCD linear image sensors with an internal electronic shutter
for spectrometers. These image sensors use a resistive gate structure that allows high-speed transfer. Each pixel has a
lengthwise size needed by spectrometers but ensures readout with low image lag.
Features
Built-in electronic shutter
Minimum integration time: 2 μs
High sensitivity from the ultraviolet region
(spectral response range: 200 to 1100 nm)
Readout speed: 10 MHz max.
Image lag: 0.1% typ.
Applications
Spectrometers
Image readout
Structure
Parameter
Pixel size (H × V)
Number of total pixels (H × V)
Number of effective pixels (H × V)
Image size (H × V)
Horizontal clock phase
Output circuit
Package
Window*¹
Cooling
S11155-2048-01
S11156-2048-01
14 × 500 μm
14 × 1000 μm
2068 × 1
2048 × 1
28.672 × 0.500 mm
28.672 × 1.000 mm
2-phase
Two-stage MOSFET source follower
24-pin ceramic DIP (refer to dimensional outline)
Quartz glass*²
Non-cooled
*1: Temporary window type (ex. S11155-2048N-01) is available upon request.
*2: Resin sealing
Resistive gate structure
In ordinary CCDs, one pixel contains multiple
electrodes and a signal charge is transferred by
applying different clock pulses to those elec-
trodes [Figure 1]. In resistive gate structures,
a single high-resistance electrode is formed in
the active area, and a signal charge is trans-
ferred by means of a potential slope that is
created by applying different voltages across
the electrode [Figure 2]. Compared to a CCD
area image sensor which is used as a linear
sensor by line binning, a one-dimensional CCD
having a resistive gate structure in the active
area offers higher speed transfer, allowing
readout with low image lag even if the pixel
height is large.
[Figure 1] Schematic diagram and potential [Figure 2] Schematic diagram and potential
of ordinary 2-phase CCD
of resistive gate structure
P1V
P2V
P1V
P2V
REGL
REGH STG TG
Resistive gate
N^-
N
N^-
N
N^-
N
N^-
N
P
P⁺
N
N^-
N
P
KMPDC0320EA
Potential slope
KMPDC0321EB
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