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GTT3585 Datasheet, PDF (3/7 Pages) GTM CORPORATION – N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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ISSUED DATE :2006/02/23
REVISED DATE :
P-Channel Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS -20
-
-
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
-0.01
-
V VGS=0, ID=-250uA
V/к Reference to 25к, ID=-1mA
Gate Threshold Voltage
Forward Transconductance
VGS(th)
-
-
-1.2
V VDS=VGS, ID=-250uA
gfs
-
4.0
-
S VDS=-5V, ID=-2A
Gate-Source Leakage Current
IGSS
-
- ±100 nA VGS= ±12V
Drain-Source Leakage Current(Tj=25к)
-
-
-1
uA VDS=-20V, VGS=0
IDSS
Drain-Source Leakage Current(Tj=70к)
-
-
-25
uA VDS=-16V, VGS=0
-
Static Drain-Source On-Resistance2 RDS(ON)
-
-
120
VGS=-10V, ID=-2.8A
-
160 m VGS=-4.5V, ID=-2.5A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
-
-
300
VGS=-2.5V, ID=-2A
Qg
-
5
8
ID=-2A
Qgs
-
1
-
nC VDS=-16V
Qgd
-
2
-
VGS=-4.5V
Td(on)
-
6
-
VDS=-10V
Tr
-
17
-
ID=-1A
ns VGS=-10V
Td(off)
-
16
-
RG=3.3
Tf
-
5
-
RD=10
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
-
270 430
VGS=0V
-
70
-
pF VDS=-20V
-
55
-
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
20
15
Max.
-1.2
-
-
Unit
Test Conditions
V IS=-1.2A, VGS=0V
ns IS=-2A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthЉ300us, duty cycleЉ2%.
3. Surface mounted on 1 in2 copper pad of FR4 board, tЉ5sec; 180к/W when mounted on Min. copper pad.
GTT3585
Page: 3/7
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