GTT3585 Datasheet, PDF (1/7 Pages) GTM CORPORATION – N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product
ISSUED DATE :2006/02/23
REVISED DATE :
GTT3585
N-CH BVDSS 20V
N-CH RDS(ON) 75m
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
N-CH ID
P-CH BVDSS
3.5A
-20V
N-CH RDS(ON) 160m
Description
N-CH ID
-2.5A
The GTT3585 provide the designer with best combination of fast switching, low on-resistance and
cost-effectiveness.
The TSSOP-6 package is universally used for all commercial-industrial surface mount applications.
Features
*Low Gate Change
*Low On-resistance
*RoHS Compliant
Package Dimensions
REF.
A
A1
A2
c
D
E
E1
Millimeter
Min. Max.
1.10 MAX.
0 0.10
0.70 1.00
0.12 REF.
2.70 3.10
2.60 3.00
1.40 1.80
REF.
L
L1
b
e
e1
Millimeter
Min. Max.
0.45 REF.
0.60 REF.
0° 10°
0.30 0.50
0.95 REF.
1.90 REF.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Symbol
V_DS
Ratings
N-channel P-channel
20
-20
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
V_GS
I_D @TA=25к
I_D @TA=70к
I_DM
P_D @TA=25к
± 12
± 12
3.5
-2.5
2.8
-1.97
10
-10
1.14
Linear Derating Factor
0.01
Operating Junction and Storage Temperature Range Tj, Tstg
-55 ~ +150
Unit
V
V
A
A
A
W
W/к
к
Thermal Data
Parameter
Thermal Resistance Junction-ambient³
Max.
Symbol
Rthj-a
Value
110
Unit
к/W
GTT3585
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