English
Language : 

GTT3585 Datasheet, PDF (2/7 Pages) GTM CORPORATION – N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
◁
ISSUED DATE :2006/02/23
REVISED DATE :
N-Channel Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
20
-
-
V VGS=0, ID=250uA
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
0.02
-
V/к Reference to 25к, ID=1mA
Gate Threshold Voltage
Forward Transconductance
VGS(th) 0.5
-
1.2
V VDS=VGS, ID=250uA
gfs
-
7
-
S VDS=5V, ID=3A
Gate-Source Leakage Current
IGSS
-
- ±100 nA VGS= ±12V
Drain-Source Leakage Current(Tj=25к)
-
-
1
uA VDS=20V, VGS=0
IDSS
Drain-Source Leakage Current(Tj=70к)
-
-
10
uA VDS=16V, VGS=0
-
Static Drain-Source On-Resistance2 RDS(ON)
-
Total Gate Charge2
Qg
-
Gate-Source Charge
Qgs
-
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Qgd
-
Td(on)
-
Rise Time
Tr
-
Turn-off Delay Time
Td(off)
-
Fall Time
Tf
-
Input Capacitance
Ciss
-
Output Capacitance
Coss
-
Reverse Transfer Capacitance
Crss
-
Gate Resistance
Rg
-
-
75
VGS=4.5V, ID=3.5A
m
-
125
VGS=2.5V, ID=1.2A
4
7
ID=3A
0.7
-
nC VDS=16V
2
-
VGS=4.5V
6
-
VDS=15V
8
-
ID=1A
ns VGS=5V
10
-
RG=3.3
3
-
RD=15
230 370
55
-
40
-
VGS=0V
pF VDS=20V
f=1.0MHz
1.1 1.7
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
16
8
Max.
1.2
-
-
Unit
Test Conditions
V IS=1.2A, VGS=0V
ns IS=3A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthЉ300us, duty cycleЉ2%.
3. Surface mounted on 1 in2 copper pad of FR4 board, tЉ5sec; 180к/W when mounted on Min. copper pad.
GTT3585
Page: 2/7
 ▷