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GP4501 Datasheet, PDF (3/9 Pages) GTM CORPORATION – N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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ISSUED DATE :2006/12/06
REVISED DATE :
P-Channel Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS -30
-
-
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
-0.028
-
V VGS=0, ID=-250uA
V/к Reference to 25к, ID=-1mA
Gate Threshold Voltage
Forward Transconductance
VGS(th) -1.0
-
-3.0
gfs
-
8.5
-
V VDS=VGS, ID=-250uA
S VDS=-10V, ID=-5.3A
Gate-Source Leakage Current
IGSS
-
- ±100 nA VGS= ±16V
Drain-Source Leakage Current(Tj=25к)
-
-
-1
uA VDS=-30V, VGS=0
IDSS
Drain-Source Leakage Current(Tj=70к)
-
-
-25
uA VDS=-24V, VGS=0
-
Static Drain-Source On-Resistance2 RDS(ON)
-
Total Gate Charge2
Qg
-
Gate-Source Charge
Qgs
-
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Qgd
-
Td(on)
-
Rise Time
Tr
-
Turn-off Delay Time
Td(off)
-
Fall Time
Tf
-
Input Capacitance
Ciss
-
Output Capacitance
Coss
-
Reverse Transfer Capacitance
Crss
-
-
50
VGS=-10V, ID=-5.3A
m
-
90
VGS=-4.5V, ID=-4.2A
20
-
ID=-5.3A
3.5
-
nC VDS=-15V
2
-
VGS=-10V
12
-
VDS=-15V
20
-
ID=-1A
ns VGS=-10V
45
-
RG=6
27
-
RD=15
790
-
440
-
120
-
VGS=0V
pF VDS=-15V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Continuous Source Current (Body Diode)
Symbol
VSD
IS
Min.
-
-
Typ.
-
-
Max.
-1.2
-1.67
Unit
Test Conditions
V IS=-2.6A, VGS=0V, Tj=25к
A VD=VG=0V, VS=-1.2V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthЉ300us, duty cycleЉ2%.
3. Mounted on 1 in2 copper pad of FR4 board; 90к/W when mounted on Min. copper pad.
GP4501
Page: 3/9
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