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GP4501 Datasheet, PDF (2/9 Pages) GTM CORPORATION – N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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ISSUED DATE :2006/12/06
REVISED DATE :
N-Channel Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
30
-
-
V VGS=0, ID=250uA
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
0.02
-
V/к Reference to 25к, ID=1mA
Gate Threshold Voltage
Forward Transconductance
VGS(th) 1.0
-
3.0
gfs
-
13
-
V VDS=VGS, ID=250uA
S VDS=10V, ID=7A
Gate-Source Leakage Current
IGSS
-
- ±100 nA VGS= ±20V
Drain-Source Leakage Current(Tj=25к)
-
-
1
uA VDS=30V, VGS=0
IDSS
Drain-Source Leakage Current(Tj=70к)
-
-
25
uA VDS=24V, VGS=0
-
Static Drain-Source On-Resistance2 RDS(ON)
-
-
28
VGS=10V, ID=7A
m
-
42
VGS=4.5V, ID=5A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
-
8.4
-
-
2.1
-
-
4.7
-
-
6
-
-
5.2
-
- 18.8 -
-
4.4
-
ID=7A
nC VDS=24V
VGS=4.5V
VDS=15V
ID=1A
ns VGS=10V
RG=3.3
RD=15
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
-
645
-
-
150
-
-
95
-
VGS=0V
pF VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Continuous Source Current (Body Diode)
Symbol
VSD
IS
Min.
-
-
Typ.
-
-
Max.
1.2
1.67
Unit
Test Conditions
V IS=7A, VGS=0V, Tj=25к
A VD=VG=0V, VS=1.2V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthЉ300us, duty cycleЉ2%.
3. Mounted on 1 in2 copper pad of FR4 board; 90к/W when mounted on Min. copper pad.
GP4501
Page: 2/9
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