GP4501 Datasheet, PDF (1/9 Pages) GTM CORPORATION – N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product
ISSUED DATE :2006/12/06
REVISED DATE :
GP4501
N-CH BVDSS 30V
N-CH RDS(ON) 28m
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
N-CH ID
P-CH BVDSS
7A
-30V
N-CH RDS(ON) 50m
Description
N-CH ID
-5.3A
The GP4501 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching
Package Dimensions
D
GAUGE PLANE
SEATING PLANE
ZZ
be
b
SECTION Z - Z
DIP-8
REF.
A
A1
A2
b
b1
b2
b3
c
Millimeter
Min.
Max.
-
0.5334
0.381
-
2.921
4.953
0.356
0.559
0.356
0.508
1.143
1.778
0.762
1.143
0.203
0.356
REF.
c1
D
E
E1
e
HE
L
Millimeter
Min.
Max.
0.203
0.279
9.017
10.16
6.096
7.112
7.620
8.255
2.540 BSC
-
10.92
2.921
3.810
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Symbol
V_DS
Ratings
N-channel P-channel
30
-30
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
V_GS
±20
±16
I_D @TA=25к
7
-5.3
I_D @TA=70к
5.8
-4.7
I_DM
20
-20
Total Power Dissipation
P_D @TA=25к
2.0
Linear Derating Factor
0.016
Operating Junction and Storage Temperature Range Tj, Tstg
-55 ~ +150
Unit
V
V
A
A
A
W
W/к
к
Thermal Data
Parameter
Thermal Resistance Junction-ambient³
Max.
Symbol
Rthj-a
Value
62.5
Unit
к/W
GP4501
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